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HUF76639S3S

N-Channel MOSFET

Description

HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.
027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.
026Ω, VGS = 10V - rDS(ON) = 0.
027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.
fairchildsemi.
com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves HUF76639P3 HUF76639S3S Symbol D Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 76639P 76639S HUF76639P3 G S HUF76639S3S NOTE: When ordering, use the entire part number.
Add the suffix T to obtain the variant in tape and reel, e.
g.
, HUF76639S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76639P3, HUF76639S3S UNITS V V V A A A A 100 100 ±16 50 51 35 34 Figure 4 Figures 6, 17, 18 180 1.
2 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) .
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VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Gate to Source Voltage .
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VGS Drain Current Continuous (TC = 25oC, VGS = 5V) .
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ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) .
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ID Continuous (TC = 100oC, VGS = 5V) .
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ID Continuous (TC = 100oC, VGS = 4.
5V) (Figure 2) .
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ID Pulsed Drain Current .
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IDM Pulsed Avalanche Rating .
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