AOM040V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET
Features
Proprietary αSiC MOSFET technology Low loss, with low RDS, ON Fast switching with low RG and low capacitance Flexible gate voltage range (VGS = 15 to 18 V) Low reverse recovery diode (Qrr) AEC-Q101 Automotive Qualified
Applications
xEV Charger Electric Vehicle Supply Equipment (...
