Power MOSFET
Description
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SiHB125N65E
Vishay Siliconix
E Series Power MOSFET
D D2PAK (TO-263)
GD S
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
57 15 14 Single
0.106
FEATURES 4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg Low effective ...
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