N-Channel MOSFET
Description
HAF2015RJ
Silicon N Channel MOS FET Series Power Switching
REJ03G1141-0300 Rev.
3.
00
Aug 27, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (5 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shut-down circuit • Temperature hysteresis type.
• High density mounting.
Outline
RENESAS Package code: PRSP0008DD-A (Package name: SOP-8 )
8765 1234
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
8765 1234
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
DD 78
2
G
Gate resistor
Tmperature sensing circuit
Self return circuit
Gate shutdown circuit
1
MOS1
S
DD 56
4
G
Gate resistor
Tmperature sensing circuit
Self return circuit
Gate shutdown circuit
3
MOS2
S
REJ03G1141-0300 Rev.
3.
00 Aug 27, 2007 Page 1 of 9
HAF2015RJ
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
VGSS
–2.
5
Drain current Drain peak current
ID
2
ID (pulse) Note 1
4
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation
IDR IAP Note 4 EAR Note 4 Pch Note 2 Pch Note 3
2 0.
54 25
2 1.
5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s
3.
2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s
4.
Tch = 25°C, Rg > 50 Ω
(Ta = 25°C)
Unit V V V A A A A mJ W W °C °C
Typical Operation Characteristics
Item Input voltage
Input current (Gate non shut down)
Input current (Gate shut down) Shut...
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