P-channel Power MOSFET
Description
NP36P06SLG
-60V – -36A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1510EJ0100
Rev.
1.
00 May.
27, 2022
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 30 m Max.
( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max.
( VGS = -4.
5 V, ID = -18 A )
Low input capacitance : Ciss = 3200 pF Typ.
Built-in gate protection diode Designed for automotive application and AEC-Q101 qualified.
Pb-free (This product does not contain Pb in the external electrode)
Outline
4
Drain
1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain(Fin)
MP-3ZK (TO-252)
Absolute Maximum Ratings
Gate
Source
Equivalent circuit
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
-60
Gate to Source Voltage (VDS = 0 V)
VGSS
20
Drain Current (DC) (Tc = 25 °C)
ID(DC)
36
Drain Current (pulse)
ID(pulse) Notes1
108
Total Power Dissipation (Tc = 25 °C)
PT1
56
Total Power Dissipation (Ta = 25 °C)
PT2
1.
2
Channel Temperature
Tch
175
Storage Temperature
Tstg
-55 to 175
Single Avalanche Current
I Notes2
AS
23.
4
Single Avalanche Energy
E Notes2 AS
54.
8
Notes 1.
PW 10 s , Duty Cycle 1%
2.
Starting Tch=25℃ , VDD = -30V , RG = 25 , VGS = -20 0V , L = 100H
(Ta=25°C)
Unit
V V A A W W °C °C A mJ
R07DS1510EJ0100 Rev.
1.
00 May.
27.
2022
Page 1 of 7
NP36P06SLG
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-c) Notes3 Rth(ch-a) Notes3
2.
68
°C/W
125
°C/W
Electrical Characteristics
(Ta=25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance
IDSS
—
—
-10
A
VDS = -60 V, VGS = 0 V
IGSS
—
—
10
A
VGS = 20 V, VDS = 0 V
VGS(off)
-1.
0
-2.
0
-2.
5
V
VDS = -10 V, ID = -1mA
| yfs | Notes4
12
—
—
S
VDS = -10 V, ID = -18 A
Drain to Source On-state Resistan...
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