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FDMS86263P

ON Semiconductor

P-Channel MOSFET


Description
MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 ...



ON Semiconductor

FDMS86263P

PDF File FDMS86263P PDF File


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