SURFACE MOUNT SCHOTTKY DIODES ARRAYS
Description
BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODES ARRAYS
These devices feature electrically-isolated Schottky diodes connected in varios configurations housed in a very small SOT-363
FEATURES
• Maximum forward voltage @ 1mA of 0.
41V • Maximum leakage current @ 50V of 100nA • Reverse voltage rating of 70V • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std.
.
(Halogen Free)
MECHANICAL DATA
• Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.
0002 ounces, 0.
006 grams • Marking: BAS70TW: A70, BAS70ADW:A72, BAS70CDW: A73,
BAS70SDW:A74
APPLICATOINS
• Rail-to rail ESD protection • Overshoot and undershoot switching control • Mobile phones and accessories • Video fame consoles connector ports
MAXIMUM RATING (Per Diode) TJ=25oC Unless otherwise noted
Parameter Repetitve Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current, t=1s, Square Wave Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range
Note : 1.
FR-5 Board 1 x 0.
75 x 0.
062 in.
Symbol VRRM VR IF I FSM PTOT RΘJA TJ TSTG
Value 70 70 200 0.
6 225 556
-55 to +125 -55 to +125
Units V V mA A
mW oC/W
oC oC
April 25,2016-REV.
04
BAS70TW
Fig.
50 (TOP VIEW)
BAS70ADW
Fig.
46 (TOP VIEW)
BAS70CDW
Fig.
47 (TOP VIEW)
BAS70SDW Fig45
(TOP VIEW)
PAGE .
1
BAS70TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode) T =25oC Unless otherwise noted J
Parameter Breakdown Voltage (Note 2) Forward Voltage (Note 2) Reverse Leakage Current (Note 2)
Symbol VBR VF IR
Test Condition
I BR=100μA
I F=1mA I F=10mA I F=15mA
VR=50 V
Junction Capacitance
Reverse Recovery Time (See Figure 1)
CD
VR=0V, f=1MHZ
I F=10mA,I R=10mA
TRR
RL=100Ω
measured at I Rrec=1mA
Note : 1.
Short duration (< 300μs) test pulse to minmize self heating
Min.
Typ.
Max.
Units
70
--
--
V
0.
41
--
--
0.
75
V
1
--
--...
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