Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
2SC3883
DESCRIPTION ·High Breakdown Voltage-
: VCEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=...
Inchange Semiconductor
2SC3883 PDF File
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