60V N-CHANNEL POWER MOSFET
Description
UNISONIC TECHNOLOGIES CO.
, LTD
80N06
Preliminary
80A, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 80N06 is an N-channel MOSFET using UTC advanced technology.
The UTC 80N06 is suitable for power supply (secondary synchronous rectification), industrial and primary switch etc.
FEATURES
* RDS(ON) < 8.
5mΩ @ VGS = 10 V, ID = 40 A
SYMBOL
2.
Drain
Power MOSFET
1.
Gate
3.
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
80N06L-TA3-T
80N06G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment
1
2
3
G
D
S
Packing Tube
MARKING
www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd
1 of 5
QW-R209-168.
b
80N06
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
Continuous
ID
80
A
Pulsed Drain Current
Pulsed (Note 2)
IDM
320
A
Avalanche Current (Note 3)
IAR
58
A
Avalanche energy
Single Pulsed (Note 3)
EAS
168
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.
0
V/nS
Power Dissipation
PD
200
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L=0.
1mH, IAS=58A, VDD=50V, RG=25Ω, Starting TJ = 25°C.
4.
ISD ≤30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.
THERMAL DATA
Junction to Ambient Junction to Case
PARAMETER
SYMBOL θJA θJC
RATINGS 62.
5 0.
625
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT °C/W °C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source L...
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