N-Channel MOSFET
Description
FQB5N90 — N-Channel QFET® MOSFET
FQB5N90
N-Channel QFET® MOSFET
900 V, 5.4 A, 2.3 Ω
Features
5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V,
Description
ID = 2.7 A
This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 31 nC)
produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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