N-Channel MOSFET
Description
FQA11N90-F109 — N-Channel QFET® MOSFET
FQA11N90-F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
Low Gate Charge (Typ. 72 nC) Low Crss (Typ. 30 pF) 100% Avalanche Tested RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconduct...
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