HALF-BRIDGE DRIVER
Description
Data Sheet No.
PD60277
IRS2304(S)PbF
Features
• Floating channel designed for bootstrap operation
to +600 V
• Tolerant to negative transient voltage, dV/dt
immune
• Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • 3.
3 V, 5 V, and 15 V input logic input compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • Lower di/dt gate driver for better noise immunity • Internal 100 ns deadtime • Output in phase with input • RoHS compliant
HALF-BRIDGE DRIVER
Product Summary
VOFFSET IO+/- (min)
VOUT Delay Matching Internal deadtime
ton/off (typ.
)
Package
600 V max.
60 mA/130 mA
10 V - 20 V 50 ns 100 ns
150 ns/150 ns
Description
The IRS2304 is a high voltage, high speed power MOSFET and IGBT driver with independent high-side
8-Lead PDIP
and low-side referenced output channels.
Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
Feature Comparison
standard CMOS or LSTTL output, down to 3.
3 V logic.
The output driver Part features a high pulse current buffer
Input logic
Crossconduction prevention
logic
Deadtime (ns)
Ground Pins
stage designed for minimum driver cross-conduction.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which oper-
2106/2301 21064 2108 21084
2109/2302 21094
HIN/LIN HIN/LIN IN/SD
no
none
COM
VSS/COM
yes
Internal 540
COM
Programmable 540 - 5000 VSS/COM
yes
Internal 540
COM
Programmable 540 - 5000 VSS/COM
ates up to 600 V.
2304
HIN/LIN
yes
Internal 100
COM
8 Lead SOIC
ton/toff (ns)
220/200 220/200 750/200 160/140
Block Diagram
up to 600 V
Vcc
LIN
LIN
VB
HIN
HIN
HO
VCC
VS
TO
LOAD
COM
LO
(Refer to Lead Assignments for correct pin configuration).
These diagrams show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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