N-CHANNEL POWER MOSFET
Description
UNISONIC TECHNOLOGIES CO.
, LTD
05N45
Preliminary
0.
5A, 450V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 05N45 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.
FEATURES
* RDS(ON) ≤ 11Ω @ VGS=10V, ID=0.
25A * High switching speed * 100% avalanche tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
05N45L-AE3-R
05N45G-AE3-R
Note: Pin Assignment: S: Source G: Gate D: Drain
Package SOT-23
Pin Assignment
1
2
3
G
S
D
Packing Tape Reel
MARKING
05N45
www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd
1 of 4
QW-R205-271.
a
05N45
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS
450
V
VGSS
±30
V
Continuous Drain Current Pulsed Drain Current (Note 2)
ID
0.
5
A
IDM
2.
0
A
Power Dissipation Junction Temperature
PD
1.
14
W
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
ID=250µA, VDS=0V VDS=450V VGS=+30V, VDS=0V VGS=-30V, VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance
VGS(TH) RDS(ON)
ID=250µA VGS=10V, ID=0.
25A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS Total Ga...
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