Silicon PNP Transistor
Description
2SB1002
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1368
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
REJ03G0660-0200 (Previous ADE-208-1035)
Rev.
2.
00 Aug.
10.
2005
1.
Base 2.
Collector 3.
Emitter 4.
Collector (Flange) 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current Collector peak current Collector power dissipation
IC iC(peak) *1
PC*2
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1.
PW ≤ 10 ms, Duty cycle ≤ 20%
2.
Value on the alumina ceramic board (12.
5 × 20 × 0.
7 mm)
Ratings –70 –50 –6 –1 –1.
5 1 150
–55 to +150
(Ta = 25°C)
Unit V V V A A W °C °C
Rev.
2.
00 Aug 10, 2005 page 1 of 5
2SB1002
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–70
—
—
V IC = –10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO –50
—
—
V IC = –1 mA, RBE = ∞
Emitter to base breakdown voltage
V(BR)EBO
–6
—
—
V IE = –10 µA, IC = 0
Collector cutoff current
ICBO
—
—
–0.
1
µA VCB = –50 V, IE = 0
Emitter cutoff current
IEBO
—
—
–0.
1
µA VEB = –4 V, IC = 0
DC current transfer ratio
hFE
160
—
320
VCE = –2 V, IC = –0.
1 A
Collector to emitter saturation voltage
VCE(sat)
—
—
–0.
6
V IC = –1 A,
IB = –0.
1 A (Pulse test)
Base to emitter saturation voltage
VBE(sat)
—
—
–1.
2
V IC = –1 A,
IB = –0.
1 A (Pulse test)
Gain bandwidth product
fT
—
150
—
MHz VCE = –2 V,
IC = –10 mA (Pulse test)
Collector output capacitance
Cob
—
35
—
pF VCB = –10 V, IE = 0,
f = 1 MHz
Rev.
2.
00 Aug 10, 2005 page 2 of 5
Collector Power Dissipation PC (W) (on the alumina ceramic board)
2SB1002
Main Characteristics
Maximum Collector Dissipation Curve 1.
2
0.
8
0.
4
Collector Current IC (A)
0
50
100
150
Ambient Temperature T...
Similar Datasheet
