1-Megabit (128K x 8) Paged Parallel EEPROM
Description
1-Megabit (128K x 8) Paged Parallel EEPROM
Features
Fast Read Access Time: 120 ns Automatic Page Write Operation:
– Internal address and data latches for 128 bytes – Internal control timer Fast Write Cycle Time: – Page Write cycle time: 10 ms maximum – 1 to 128-byte Page Write operation Low-Power Dissipation: – 40 mA active current – 200 µA CMOS stan...
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