ESD Protection
Description
NIV2161, NIS2161
ESD Protection with Automotive Short-toBattery & Ground Protection
Low Capacitance ESD Protection w/ short− to−battery and short−to−ground Protection for Automotive High Speed Data Lines
The NIS/NIV2161 is designed to protect high speed data lines from ESD as well as short to vehicle battery situations.
The ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines while the low RDS(on) FET limits distortion on the signal lines.
The flow−through style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines such as USB and LVDS protocols.
Features
• Low Capacitance (0.
40 pF Typical, I/O to GND) • Protection for the Following Standards:
IEC 61000−4−2 (Level 4) & ISO 10605
• Integrated MOSFETs for Short−to−Battery and Short−to−Ground
Protection
• NIV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Automotive High Speed Signal Pairs • USB 2.
0/3.
0 • LVDS • APIX 2/3
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ(max) −55 to +150
°C
Storage Temperature Range
TSTG −55 to +150
°C
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
Lead Temperature Soldering
IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD)
VGS
±10
V
TSLD
260
°C
ESD
±8
kV
ESD
±15
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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WDFN10 CASE 511CA
MARKING DIAGRAM
V2 MG G
V2 = Specific Device Code M = Date Code G = Pb−Free Package
(Note: Microdot may be...
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