Fast Recovery Diode
Description
VRM = 600 V, IF(AV) = 60 A, trr = 100 ns Fast Recovery Diode
FMNS-4606S
Data Sheet
Description
The FMNS-4606S is a 600 V, 60 A, fast recovery diode.
The maximum VF of 1.
3 V and the maximum trr of 100 ns (IF : IRP = 1 : 2) are realized by optimizing the trade-off relationship between VF and trr.
The low thermal resistance package achieves high performance in terms of heat dissipation.
Features
● VRM------------------------------------------------------ 600 V ● IF(AV)------------------------------------------------------- 60 A ● VF--------------------------------------------------------- 1.
3 V ● trr1 (IF = IRP) -------------------------------------------- 150 ns ● Bare Lead Frame: Pb-free (RoHS Compliant) ● Flammability: Equivalent to UL94V-0
Applications
● PFC Crcuit ● Inverter Circuit ● Secondary-side Rectifier Diode
(Flyback Converter, LLC Converter, etc.
) ● Freewheel Diode
(Offline Buck Converter, Offline Buck-boost Converter, etc.
)
Package
TO3PF-3L
(1)
(1) (2)(3)
(3)
(1) Anode (2) Cathode
(3) Anode
(2)
Not to scale
FMNS-4606S-DSE Rev.
1.
3
SANKEN ELECTRIC CO.
, LTD.
1
Feb.
04, 2020
https://www.
sanken-ele.
co.
jp/en
© SANKEN ELECTRIC CO.
, LTD.
2016
FMNS-4606S
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Nonrepetitive Peak Reverse Voltage
VRSM
600
V
Repetitive Peak Reverse Voltage
VRM
600
V
Average Forward Current Surge Forward Current I2t Limiting Value
IF(AV) See Figure 1 and Figure 2
60
A
IFSM
Half cycle sine wave, positive side, 10 ms, 1 shot
200
A
I2t
1 ms ≤ t ≤ 10 ms
200
A2s
Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
TSTG
−40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop (1)
VF
Reverse Leakage Current(1)
IR
Reverse Leakage Current under High Temperature(1)
H∙IR
trr1 Reverse Recovery Time(1)
trr2
Thermal Resistance(2)
Rth(J-C)
Conditions
TJ = 25 °C, IF = 30 A
...
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