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BUV21G

ON Semiconductor

NPN Silicon Power Transistor


Description
BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features High DC Current Gain: hFE min = 20 at IC = 12 A Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A These are Pbāˆ’Free Devices* MAXIMUM RATINGS Rating Symbo...



ON Semiconductor

BUV21G

PDF File BUV21G PDF File


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