IGBT
Description
SEMiX223GB17E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX223GB17E4p
Features*
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • UL recognized, file no.
E63532
Typical Applications
• AC inverter drives • UPS • Renewable energy systems
Remarks
• Product reliability results are valid for Tj=150°C
• Visol between temperature sensor and power section is only 2500V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
module without TIM
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
Rth(j-c) Rth(c-s)
Rth(c-s)
IC = 225 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE = VCE, IC = 9 mA
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V.
.
.
+ 15 V
Tj = 25 °C
VCC = 900 V
Tj = 150 °C
IC = 225 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 5300 A/µs Tj = 150 °C
di/dtoff = 1300 A/µs
dv/dt = 3600 V/µs Tj = 150 °C
Ls = 25 nH
per IGBT
per IGBT (λgrease=0.
81 W/(m*K)) per IGBT, pre-applied phase change material
Values
1700 379 293 225 675 -20 .
.
.
20
10
-40 .
.
.
175
1700 273 203 450 1377 -40 .
.
.
175
600 -40 .
.
.
125
4000
Unit
V A A A A V
µs
°C
V A A A A °C
A °C V
min.
5.
2
typ.
1.
90 2.
30 0.
80 0.
70 4.
9 7.
1 5.
8
20.
4 0.
80 0.
66 1800 2.
8 200 45 43 550 145
70
0.
029
0.
02
max.
Unit
2.
20
V
2.
60
V
0.
90
V
0.
80
V
5.
8
mΩ
8.
0
mΩ
6.
4
...
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