Silicon NPN Transistor
Description
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1384
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification Complementary to 2SA0684
Features
Package
Low collector-emitter saturation voltage VCE(sat)
Code
Complementary pair with 2SA0684
TO-92L-A1
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open)
VCBO
60
V
Pin Name 1.
Emitter 2.
Collector 3.
Base
Collector-emitter voltage (Base open)
e pe) Emitter-base voltage (Collector open) c e.
d ty Collector current n d stag tinue Peak collector current a e cle con Collector power dissipation
lifecy , dis Junction temperature
n u duct typed Storage temperature
VCEO
50
V
VEBO
5
V
IC
1
A
ICP
1.
5
A
PC
1
W
Tj
150
°C
Tstg –55 to +150 °C
te ting four Pcroontinued Electrical Characteristics Ta = 25°C±3°C
win dis Parameter
Symbol
Conditions
Min Typ Max
in n s follo laned Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
a o lude e, p Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
inc typ Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
5
c tinued ance Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
M is iscon ainten Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 500 mA
85
/D m hFE2 VCE = 5 V, IC = 1 A
50
ce pe, Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
D tenan ce ty Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
ain nan Transition frequency
fT VCB = 10 V, IE = –50 mA, f = 200 MHz
M ainte Collector output capacitance m (Common base, input open circuited)
Cre VCB = 10 V, IE = 0, f = 1 MHz
0.
1 340
0.
2 0.
4 0.
85 1.
20 200
11
20
ned Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(pla 2.
*1: Pulse measurement
Unit V V V mA
V V MHz
pF
*2: Rank cl...
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