Power Transistor
Description
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G
Product Summary V DS R DS(on),max ID
80 V 3.
5 mΩ 100 A
Type
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Package Marking
PG-TO220-3 037N08N
PG-TO262-3 037N08N
PG-TO263-3 035N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse3)
ID
I D,pulse E AS
T C=25 °C2) T C=100 °C T C=25 °C I D=100 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Value
100 100 400 510 ±20 214 -55 .
.
.
175 55/175/56
Rev.
2.
4
page 1
Unit A
mJ V W °C
2010-06-23
IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area4)
-
-
0.
7 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Drain-source on-state resistance (SMD) Gate resistance Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
80
V GS(th) V DS=V GS, I D=155 µA
2
I DSS
V DS=80 V, V GS=0 V, T j=25 °C
-
V DS=80 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=...
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