Power Transistor
Description
IPA030N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free accoridng to IEC61249-2-21
Type
IPA030N10N3 G
100 V 3 mW 79 A
Package Marking
PG-TO220-FP 030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=79 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
Unit
79
A
56
316
1000
mJ
±20
V
41
W
-55 .
.
.
175
°C
55/175/56
Rev.
2.
2
page 1
2013-08-27
IPA030N10N3 G
Parameter
Symbol Conditions
Thermal characteristics Thermal resistance, junction - case R thJC
min.
Values typ.
Unit max.
-
-
3.
7 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=270 µA
2
2.
7
3.
5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
-
0.
1
1 µA
Gate-source leakage current
V DS=100 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
10
100
1
100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=79 A
-
2.
6
3 mW
Gate resistance Transconductance
V GS=6 V, I D=40 A
-
3
4.
8
RG
-
1.
9
-W
g fs
|V DS|>2|I D|R DS(on)max, I D=79 A
86
171
-S
3) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is ver...
Similar Datasheet
