MOSFET
Description
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor IPx60R099P6
DataSheet
Rev.
2.
1 Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.
Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.
g.
PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
TO-247
TO-220
tab
TO-220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
99
mΩ
Qg.
typ
70
nC
ID,pulse
109
A
Eoss@400V
8.
8
µJ
Body diode di/dt
300
A/µs
Type/OrderingCode IPW60R099P6 IPP60R099P6 IPA60R099P6
Package PG-TO 247 PG-TO 220 PG-TO 220 FullPAK
Marking 6R099P6
RelatedLinks see Appendix A
Final Data Sheet
2
Rev.
2.
1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
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