Power MOSFET
Description
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA05N100HV IXTA05N100 IXTP05N100
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263 TO-263HV
Maximum Ratings
1000
V
1000
V
30
V
40
V
750
mA
3
A
1
A
100
mJ
3
V/ns
40
W
-55 .
.
.
+150
C
150
C
-55 .
.
.
+150
C
300
°C
260
°C
1.
13 / 10
Nm/lb.
in
3.
0
g
2.
5
g
2.
5
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 375mA, Note 1
Characteristic Values Min.
Typ.
Max.
1000
V
2.
5
4.
5 V
100 nA
25 A 500 A
17
VDSS =
ID25 = RDS(on)
1000V 750mA 17
TO-263HV (IXTA)
G S D (Tab)
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
High Voltage Package (TO-263HV) Fast Switching Times Avalanche Rated Rds(on) HDMOSTM Process Rugged Polysilicon Gate Cell structure Extended FBSOA
Advantages
High Power Density Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
Flyback Inverters DC Choppers
© 2014 IXYS CORPORATION, All rights reserved
DS98736F(5/14)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 500mA, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 1A RG = 47 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.
5 • VDSS, ID = 1A
RthJC RthCS
(TO-220)
IXTA05N100HV IXTA05N100 IXTP05N100
Characteristic Values M...
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