N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
42
PD
Total Dissipation @TC=25℃
300
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX 0.
42
UNIT ℃/W
IXTA14N60P
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 7A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 14A; VGS = 0V
IXTA14N60P
MIN MAX UNIT
600
V
3.
0
5.
5
V
550
mΩ
±100
nA
5 μA
100
1.
5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products...
Similar Datasheet
