IPP072N10N3 G IPI072N10N3 G
OptiMOS®3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Ideal for high-fr...
