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8N80

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 8N80 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A ·Drain Current –ID=8.0A@ TC=25℃ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switc...

INCHANGE

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