isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed 100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed especially for high voltage,high speed applications,
such as switching power supplies .
ABSOLUT...
