NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2051
DESCRIPTION ·High DC Current Gain
: hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For low-frequency amp...
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