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2SB508

PNP Transistor

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB508 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD314 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the out...

INCHANGE

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