DatasheetsPDF.com

MJE801T

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE701T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed swit...

INCHANGE

Download MJE801T Datasheet

Similar Datasheet

MJE800 NPN Transistor - Fairchild
MJE800 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola
MJE800 DARLINGTON POWER TRANSISTORS - ON
MJE800 NPN Transistor - INCHANGE
MJE800 (MJE800 - MJE803) SILICON POWER TRANSISTOR - SavantIC
MJE800 Transistor - Central Semiconductor
MJE800G Plastic Darlington Complementary Silicon Power Transistors - ON Semiconductor
MJE800T NPN Transistor - INCHANGE
MJE800T POWER TRANSISTOR - Central Semiconductor
MJE800T 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)