DatasheetsPDF.com

2SB1098

PNP Transistor

Description

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low speed switching industrial ·Low frequency power amplifier ABSOLUTE MAXIMUM RAT...

INCHANGE

Download 2SB1098 Datasheet

Similar Datasheet

2SB1000 LOW FREQUENCY POWER AMPLIFIER - Hitachi Semiconductor
2SB1000A LOW FREQUENCY POWER AMPLIFIER - Hitachi Semiconductor
2SB1001 Silicon PNP Epitaxial Transistor - Hitachi Semiconductor
2SB1001 Silicon PNP Transistor - Kexin
2SB1001 Silicon PNP Transistor - Renesas
2SB1002 Silicon PNP Transistor - Hitachi Semiconductor
2SB1002 Silicon PNP Transistor - Renesas
2SB1005 PNP Transistor - INCHANGE
2SB1005 SILICON POWER TRANSISTOR - SavantIC
2SB1007 PNP Transistor - INCHANGE

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)