NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for high speed switching and linear- amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5
℃/W
2N3878
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iscsemi.
com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
4A
VBE(ON) Base-Emitter On Voltage
IC=4A;VCE= 2V
hFE-1*
DC Current Gain
IC= 0.
5A; VCE= 2V
hFE-2*
DC Current Gain
IC= 4A; VCE= 2V
hFE-3*
DC Current Gain
IC= 4A; VCE= 5V
hFE-4*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.
5A; VCE= 5V
2N3878
MIN MAX UNIT
50
V
10
mA
2.
0
V
2.
5
V
40 200
8
20
50 200
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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