PNP Transistor
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For medium-speed switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-5
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.
17 ℃/W
2N3196
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iscsemi.
com
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isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.
6A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; VCE=-0.
6V
ICEO
Collector Cutoff Current
VCE= -60V; IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -3A ; VCE= -3V
2N3196
MIN MAX UNIT
-0.
9
V
-1.
9
V
-5.
0 mA
-1.
0 mA
10
30
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC...
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