NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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