NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching applications...
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