NPN Transistor
Description
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB655 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATIN...
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