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2SD612

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SD612 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) ·High Collector Dissipation ·Wide Area of Safe Operation ·Complement to Type 2SB632 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLU...

INCHANGE

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