PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
2SB1404
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -1.
5A) ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-6
A
2 W
25
150
℃
Tstg
Storage Temperature
-55~150 ℃
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iscsemi.
cn
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isc Silicon PNP Darlington Power Transistor
2SB1404
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.
1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.
5A; IB= -3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -1.
5A; IB= -3mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -3A; IB= -30mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
hFE
DC Current Gain
IC= -1.
5A; VCE= -3V
MIN TYP.
MAX UNIT
-120
V
-120
V
-7
V
-1.
5
V
-3.
0
V
-2.
0
V
-3.
5
V
-10
μA
-10
μA
1000
20000
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designe...
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