PNP Transistor
Description
isc Silicon PNP Power Transistor
2SB1393
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Max,)@ IC= -3A ·Complement to Type 2SD1985 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for high power am...
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