PNP Transistor - INCHANGE
Description
isc Silicon PNP Power Transistor
2SB1392
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.
) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
2 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10μA; IC= 0
VCE(sat)★ Collector-Emitter Saturation Voltage IC= -2A; IB= -0.
2A
VBE(sat)★ Base-Emitter Saturation Voltage
IC= -2A; IB= -0.
2A
VBE(on)★ Base-Emitter On Voltage
IC= -1A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
ICEO
Collector Cutoff Current
VCE= -50V; RBE= ∞
hFE-1★
DC Current Gain
IC= -1A; VCE= -4V
hFE-2★
DC Current Gain
★：Pulse test.
hFE-1 Classifications
B
C
IC= -0.
1A; VCE= -4V
60-120 100-200
2SB1392
MIN TYP.
MAX UNIT
-60
V
-70
V
-5
V
-1.
0 V
-1.
2 V
-1.
0 V
-10 μA
-10 μA
60
200
35
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SB1392
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for us...
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