PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
2SB1389
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-8
A
2 W
25
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2SB1389
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞
-60
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.
1mA; IE= 0
-60
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA
-1.
5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
-3.
0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -2A; IB= -4mA
-2.
0
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -4A; IB= -40mA
-3.
5
V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
-10
μA
ICEO
Collector Cutoff Current
VCE= -50V; RBE= ∞
-10
μA
hFE
DC Current Gain
IC= -2A; VCE= -3V
1000
20000
VECF
C-E Diode Forward Voltage
IF= 4A
3.
0
V
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipme...
Similar Datasheet
