PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for driver of solenoid, motor and genera...
Similar Datasheet
