PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performance
and reliabl...
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