PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
2SB1381
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 1500(Min)@ (VCE= -3V, IC= -2.
5A) ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
5V(Max)@ (IC= -2.
5A, IB= -5mA) ·Complement to Type 2SD2079 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IB
Base Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-0.
5
A
2 W
30
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2SB1381
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.
5A; IB= -5mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2.
5A; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE-1
DC Current Gain
IC= -2.
5A; VCE= -3V
hFE-2
DC Current Gain
IC= -7A; VCE= -3V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2.
5A, IB1= -IB2= -5mA, VCC≈ -25V; RL= 10Ω
MIN TYP.
MAX UNIT
-100
V
-1.
5
V
-3.
0
V
-2.
5
V
-100 μA
-2.
5 mA
1500
15000
500
0.
8
μs
2.
5
μs
2.
0
μs
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2SB1381
Notice： ISC reserves the rights to make ch...
Similar Datasheet
