PNP Transistor
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
5V(Max)@ (IC= -2A, IB= -0.
2A) ·Complement to Type 2SD2012 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
2SB1375
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-0.
5
A
2 W
25
150
℃
Tstg
Storage Temperature
-55~150 ℃
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iscsemi.
cn
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isc Silicon PNP Power Transistor
2SB1375
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.
2A
VBE(on) Base-Emitter On Voltage
IC= -0.
5A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.
5A ; VCE= -5V
hFE-2
DC Current Gain
IC= -2A ; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.
5A; VCE= -5V
MIN TYP.
MAX UNIT
-60
V
-1.
5 V
-1.
0 V
-10 μA
-10 μA
100
320
15
50
pF
9
MHz
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and...
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