NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
·Complement to Type MJE701 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
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