PNP Transistor
Description
isc Silicon PNP Power Transistor
2SA1116
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min.
) ·High Power Dissipation ·Complement to Type 2SC2607 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-5
A
150
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
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iscsemi.
com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -5A ; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.
5A; VCE= -12V
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -5A, RL= 12Ω, IB1= -IB2= -0.
5A, VCC= -60V
2SA1116
MIN TYP.
MAX UNIT
-200
V
-3.
0 V
-100 μA
-100 μA
30
20
MHz
0.
3
μs
0.
9
μs
0.
2
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these s...
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