PNP Transistor
Description
isc Silicon PNP Power Transistor
2SA483
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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