NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC5200H
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC5200H
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.
0A; IB= 0.
8A
VBE(on)
Base-Emitter On Voltage
IC= 7A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
COB
Output Capacitance
IE=0 ; VCB= 10V;f= 1.
0MHz
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
MIN TYP.
MAX UNIT
300
V
0.
4 3.
0
V
1.
0 1.
5
V
5
μA
5
μA
55
160
35
700
pF
20
MHz
hFE-1 Classifications
R 55-110
O 80-160
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC5200H
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
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